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IRFS7734-7PPBF

IRFS7734-7PPBF Infineon Technologies


irfs7734-7ppbf-1228417.pdf Hersteller: Infineon Technologies
MOSFET 75V Single N-Channel HEXFET
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Technische Details IRFS7734-7PPBF Infineon Technologies

Description: MOSFET N-CH 75V 197A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 197A (Tc), Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 150µA, Supplier Device Package: D²PAK (TO-263AB), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V.

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IRFS7734-7PPBF IRFS7734-7PPBF Hersteller : Infineon Technologies irfs7734-7ppbf.pdf?fileId=5546d462533600a40153563ac71b21e6 Description: MOSFET N-CH 75V 197A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: D²PAK (TO-263AB)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V
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