Technische Details IRFSL3107PBF Infineon Technologies
Description: MOSFET N-CH 75V 195A TO262, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V.
Weitere Produktangebote IRFSL3107PBF nach Preis ab 4.05 EUR bis 10.65 EUR
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IRFSL3107PBF | Infineon Technologies |
 Trans MOSFET N-CH Si 75V 230A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 978 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL3107PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 195A TO262 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V |
auf Bestellung 4390 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL3107PBF | Infineon / IR |
MOSFET MOSFT 75V 230A 3mOhm 160nC |
auf Bestellung 978 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFSL3107PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 230A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH Si 75V 230A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 978 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 127+ | 4.35 EUR |
| 500+ | 4.05 EUR |
| IRFSL3107PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
Description: MOSFET N-CH 75V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
auf Bestellung 4390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 109+ | 4.36 EUR |
| IRFSL3107PBF |
|
Hersteller: Infineon / IR
MOSFET MOSFT 75V 230A 3mOhm 160nC
MOSFET MOSFT 75V 230A 3mOhm 160nC
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.65 EUR |
| 10+ | 9.57 EUR |
| 100+ | 7.83 EUR |
| 500+ | 6.69 EUR |