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IRFSL3107PBF

IRFSL3107PBF Infineon Technologies

irfs3107pbf.pdf?fileId=5546d462533600a4015356365a922154 Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
auf Bestellung 4390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
109+4.49 EUR
Mindestbestellmenge: 109
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Technische Details IRFSL3107PBF Infineon Technologies

Description: MOSFET N-CH 75V 195A TO262, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V.

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IRFSL3107PBF IRFSL3107PBF Hersteller : Infineon / IR Infineon_IRFS3107_DataSheet_v01_01_EN-1228255.pdf MOSFET MOSFT 75V 230A 3mOhm 160nC
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.65 EUR
10+ 9.57 EUR
100+ 7.83 EUR
500+ 6.69 EUR
IRFSL3107PBF IRFSL3107PBF Hersteller : Infineon Technologies irfs3107pbf.pdf?fileId=5546d462533600a4015356365a922154 Description: MOSFET N-CH 75V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
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