Technische Details IRFSL3207ZPBF Infineon Technologies
Description: MOSFET N-CH 75V 120A TO262, Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Weitere Produktangebote IRFSL3207ZPBF nach Preis ab 2.57 EUR bis 8.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFSL3207ZPBF | Infineon Technologies |
 Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 956 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IRFSL3207ZPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 120A TO262 Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
IRFSL3207ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
IRFSL3207ZPBF | Infineon Technologies |
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 16200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IRFSL3207ZPBF | Infineon Technologies |
MOSFETs MOSFT 75V 170A 4.1mOhm 120nC |
auf Bestellung 4409 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFSL3207ZPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 956 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 2.85 EUR |
| 500+ | 2.67 EUR |
| IRFSL3207ZPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO262
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 75V 120A TO262
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.91 EUR |
| 50+ | 3.1 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.6 EUR |
| IRFSL3207ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.85 EUR |
| 21+ | 3.55 EUR |
| 25+ | 2.95 EUR |
| 50+ | 2.57 EUR |
| IRFSL3207ZPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 16200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 7.74 EUR |
| 32+ | 4.49 EUR |
| 100+ | 3.69 EUR |
| 500+ | 3.11 EUR |
| 1000+ | 2.68 EUR |
| IRFSL3207ZPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 75V 170A 4.1mOhm 120nC
MOSFETs MOSFT 75V 170A 4.1mOhm 120nC
auf Bestellung 4409 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.32 EUR |
| 10+ | 5.46 EUR |
| 100+ | 4.05 EUR |
| 500+ | 3.41 EUR |
| 1000+ | 3.15 EUR |
| 2000+ | 2.96 EUR |