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IRFSL3307ZPBF


irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c
Hersteller: IR
08+ TO262
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Technische Details IRFSL3307ZPBF IR

Description: MOSFET N-CH 75V 120A TO262, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V.

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IRFSL3307ZPBF IRFSL3307ZPBF Infineon Technologies irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c Description: MOSFET N-CH 75V 120A TO262
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL3307ZPBF irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO262
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH