Technische Details IRFSL4127PBF Infineon Technologies
Description: MOSFET N-CH 200V 72A TO262, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Weitere Produktangebote IRFSL4127PBF nach Preis ab 3.82 EUR bis 9.35 EUR
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IRFSL4127PBF | Infineon Technologies |
 Trans MOSFET N-CH 200V 72A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4127PBF | Infineon Technologies |
MOSFETs MOSFT 200V 76A 23.2mOhm 100nC |
auf Bestellung 262 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL4127PBF | Infineon Technologies |
Description: MOSFET N-CH 200V 72A TO262 Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFSL4127PBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 72A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 200V 72A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 4.43 EUR |
| IRFSL4127PBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 200V 76A 23.2mOhm 100nC
MOSFETs MOSFT 200V 76A 23.2mOhm 100nC
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.06 EUR |
| 10+ | 4.96 EUR |
| 100+ | 4.28 EUR |
| IRFSL4127PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 72A TO262
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 200V 72A TO262
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.35 EUR |
| 50+ | 4.96 EUR |
| 100+ | 4.54 EUR |
| 500+ | 3.82 EUR |