IRFSL4410ZPBF Infineon Technologies
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 230+ | 2.37 EUR |
| 500+ | 2.16 EUR |
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Technische Details IRFSL4410ZPBF Infineon Technologies
Description: MOSFET N-CH 100V 97A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-262, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Weitere Produktangebote IRFSL4410ZPBF nach Preis ab 2.36 EUR bis 4.61 EUR
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IRFSL4410ZPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4410ZPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4410ZPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4410ZPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 100V 97A 9mOhm 83nC |
auf Bestellung 1389 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL4410ZPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 681 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4410ZPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFSL4410ZPBF - IRFSL4410Z - TRENCH 100V tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 681 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4410ZPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 97A Power dissipation: 230W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFSL4410ZPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 97A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-262 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
Produkt ist nicht verfügbar |
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IRFSL4410ZPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 97A Power dissipation: 230W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |