IRFSL7430PBF Infineon Technologies
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 73+ | 2.01 EUR |
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Technische Details IRFSL7430PBF Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V.
Weitere Produktangebote IRFSL7430PBF nach Preis ab 2.01 EUR bis 7.15 EUR
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IRFSL7430PBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 40V 426A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL7430PBF | Hersteller : International Rectifier |
Description: MOSFET N-CH 40V 195A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V |
auf Bestellung 4360 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL7430PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 426A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 33133 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL7430PBF | Hersteller : Infineon Technologies |
MOSFET HEXFET Power MOSFET 40V Single N-Channel |
auf Bestellung 402 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFSL7430PBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFSL7430PBF - IRFSL7430 12V-300V N-CHANNEL POWER MOSF tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL7430PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 301A Power dissipation: 375W Case: TO262 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFSL7430PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 301A Power dissipation: 375W Case: TO262 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |