IRFSL7537PBF Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.82 EUR |
| 10+ | 4.88 EUR |
| 100+ | 3.62 EUR |
| 250+ | 3.61 EUR |
| 500+ | 3.2 EUR |
| 1000+ | 3.09 EUR |
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Technische Details IRFSL7537PBF Infineon Technologies
Description: MOSFET N-CH 60V 173A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 173A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 150µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V.
Weitere Produktangebote IRFSL7537PBF nach Preis ab 2.99 EUR bis 8.27 EUR
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IRFSL7537PBF | Infineon Technologies |
 Description: MOSFET N-CH 60V 173A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFSL7537PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 173A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 60V 173A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.27 EUR |
| 10+ | 5.46 EUR |
| 100+ | 3.87 EUR |
| 500+ | 3.18 EUR |
| 1000+ | 2.99 EUR |