 
IRFSL7730PBF International Rectifier
 Hersteller: International Rectifier
                                                Hersteller: International RectifierDescription: IRFSL7730 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 163+ | 3.09 EUR | 
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Technische Details IRFSL7730PBF International Rectifier
Description: IRFSL7730 - 12V-300V N-CHANNEL P, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TO-262, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V. 
Weitere Produktangebote IRFSL7730PBF nach Preis ab 4.49 EUR bis 7.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | IRFSL7730PBF | Hersteller : Infineon / IR |  MOSFET 75V Single N-Channel HEXFET | auf Bestellung 11 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFSL7730PBF | Hersteller : Infineon Technologies |  Description: MOSFET N-CH 75V 195A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V | Produkt ist nicht verfügbar |