IRFSL7734PBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 235+ | 2.34 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 2.03 EUR |
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Technische Details IRFSL7734PBF Infineon Technologies
Description: IRFSL7734 - 12V-300V N-CHANNEL P, Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 290W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 183A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk.
Weitere Produktangebote IRFSL7734PBF nach Preis ab 2.5 EUR bis 2.5 EUR
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IRFSL7734PBF | International Rectifier |
 Description: IRFSL7734 - 12V-300V N-CHANNEL PInput Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 183A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFSL7734PBF |
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Hersteller: International Rectifier
Description: IRFSL7734 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Description: IRFSL7734 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 202+ | 2.5 EUR |