IRFU024NPBFAKLA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 17A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: 20V
Mounting: THT
Gate charge: 20nC
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 300+ | 0.31 EUR |
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Technische Details IRFU024NPBFAKLA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V.
Weitere Produktangebote IRFU024NPBFAKLA1 nach Preis ab 0.69 EUR bis 2.69 EUR
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| IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies |
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auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies |
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auf Bestellung 1550 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies |
HExFET Power MOSFET |
auf Bestellung 3882 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies |
MOSFETs PLANAR 40<-<100V |
auf Bestellung 2992 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies |
PLANAR 40<-<100V |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK (TO-251AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
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