IRFU024PBF
Produktcode: 49505
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller: IR
Gehäuse: TO-251
Uds,V: 60
Idd,A: 14
Rds(on), Ohm: 01.10.2000
Ciss, pF/Qg, nC: 640/25
Bem.: MOSFET
JHGF: THT
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote IRFU024PBF nach Preis ab 0.76 EUR bis 3.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFU024PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1423 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IRFU024PBF | Vishay Semiconductors |
MOSFETs TO251 N-CH 60V 14A |
auf Bestellung 1391 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IRFU024PBF | Vishay Siliconix |
Description: MOSFET N-CH 60V 14A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
auf Bestellung 4118 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| IRFU024PBF | Vishay/IR |
N-канальний ПТ, Udss, В = 60, Id = 14 A, Ptot, Вт = 2,5, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 640 пФ @ 25 D, Qg, нКл = 25 @ 10 В, Rds = 100 мОм @ 8.4 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: I-PAK Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 11 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| IRFU024PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1423 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 65+ | 1.1 EUR |
| 68+ | 1.05 EUR |
| 71+ | 1.01 EUR |
| 74+ | 0.97 EUR |
| 77+ | 0.94 EUR |
| 150+ | 0.89 EUR |
| 1050+ | 0.76 EUR |
| IRFU024PBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO251 N-CH 60V 14A
MOSFETs TO251 N-CH 60V 14A
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.84 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.24 EUR |
| IRFU024PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 60V 14A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 4118 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.98 EUR |
| 75+ | 1.83 EUR |
| 150+ | 1.65 EUR |
| 525+ | 1.39 EUR |
| 1050+ | 1.28 EUR |
| 2025+ | 1.2 EUR |
| IRFU024PBF |
|
Hersteller: Vishay/IR
N-канальний ПТ, Udss, В = 60, Id = 14 A, Ptot, Вт = 2,5, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 640 пФ @ 25 D, Qg, нКл = 25 @ 10 В, Rds = 100 мОм @ 8.4 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: I-PAK Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
N-канальний ПТ, Udss, В = 60, Id = 14 A, Ptot, Вт = 2,5, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 640 пФ @ 25 D, Qg, нКл = 25 @ 10 В, Rds = 100 мОм @ 8.4 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: I-PAK Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 11 Stücke:
Im Einkaufswagen
Stück im Wert von UAH