auf Bestellung 2508 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.12 EUR |
| 10+ | 2.8 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.81 EUR |
Produktrezensionen
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Technische Details IRFU2405PBF Infineon / IR
Description: MOSFET N-CH 55V 56A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V.
Weitere Produktangebote IRFU2405PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFU2405PBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 56A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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IRFU2405PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: IPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 70nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFU2405PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 56A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK (TO-251AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFU2405PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: IPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 70nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |