IRFU3910PBF
Produktcode: 77965
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Lieblingsprodukt
Hersteller: IR
Gehäuse: TO-251AA
Uds,V: 100
Idd,A: 16
Rds(on), Ohm: 0.115
Ciss, pF/Qg, nC: 640/44
JHGF: THT
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Technische Details IRFU3910PBF IR
- MOSFET, N, 100V, 15A, I-PAK
- Transistor Polarity:N
- Max Voltage Vds:100V
- On State Resistance:0.115ohm
- Power Dissipation:79W
- Transistor Case Style:I-PAK
- SVHC:No SVHC
- Alternate Case Style:I-PAK
- Case Style:I-PAK
- Cont Current Id:16A
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Junction to Case Thermal Resistance A:2.4`C/W
- Lead Length:9.65mm
- Lead Spacing:2.28mm
- No. of Transistors:1
- Power Dissipation Pd:79W
- Pulse Current Idm:60A
- SMD Marking:IRFU3910
- Termination Type:Through Hole
- Transistor Type:MOSFET
- Turn Off Time, t Off:25ns
- Turn On Time, t On:27ns
- Typ Voltage Vds:100V
- Typ Voltage Vgs th:4V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRFU3910PBF nach Preis ab 0.57 EUR bis 2.6 EUR
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IRFU3910PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: THT Gate charge: 29.3nC Kind of channel: enhancement |
auf Bestellung 269 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU3910PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 16A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK (TO-251AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
auf Bestellung 2969 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU3910PBF | Infineon Technologies |
MOSFETs MOSFT 100V 15A 115mOhm 29.3nC |
auf Bestellung 1055 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFU3910PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: THT
Gate charge: 29.3nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: THT
Gate charge: 29.3nC
Kind of channel: enhancement
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 150+ | 0.57 EUR |
| IRFU3910PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 100V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 75+ | 1.06 EUR |
| 150+ | 0.95 EUR |
| 525+ | 0.79 EUR |
| 1050+ | 0.72 EUR |
| 2025+ | 0.67 EUR |
| IRFU3910PBF |
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Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 15A 115mOhm 29.3nC
MOSFETs MOSFT 100V 15A 115mOhm 29.3nC
auf Bestellung 1055 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.6 EUR |
| 10+ | 1.15 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.72 EUR |
| 6000+ | 0.7 EUR |