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Technische Details IRFU420PBF Vishay
Description: MOSFET N-CH 500V 2.4A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRFU420PBF nach Preis ab 0.49 EUR bis 3.52 EUR
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IRFU420PBF | Vishay |
 Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK |
auf Bestellung 311 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | Vishay |
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251 Case: IPAK; TO251 Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 19nC Drain current: 1.5A On-state resistance: 3Ω Gate-source voltage: ±20V Power dissipation: 42W Drain-source voltage: 500V Kind of channel: enhancement |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | Vishay Semiconductors |
MOSFETs N-Chan 500V 2.4 Amp |
auf Bestellung 9623 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU420PBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 2.4A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
auf Bestellung 1815 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFU420PBF |
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Hersteller: Vishay
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK
auf Bestellung 311 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 232+ | 0.63 EUR |
| IRFU420PBF |
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Hersteller: Vishay
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 152+ | 0.97 EUR |
| 161+ | 0.9 EUR |
| 300+ | 0.85 EUR |
| 525+ | 0.8 EUR |
| 1050+ | 0.77 EUR |
| 2025+ | 0.73 EUR |
| IRFU420PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251
Case: IPAK; TO251
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 19nC
Drain current: 1.5A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Power dissipation: 42W
Drain-source voltage: 500V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251
Case: IPAK; TO251
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 19nC
Drain current: 1.5A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Power dissipation: 42W
Drain-source voltage: 500V
Kind of channel: enhancement
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 87+ | 0.83 EUR |
| 96+ | 0.75 EUR |
| 109+ | 0.66 EUR |
| 124+ | 0.58 EUR |
| 150+ | 0.55 EUR |
| 300+ | 0.53 EUR |
| 525+ | 0.51 EUR |
| 1050+ | 0.49 EUR |
| IRFU420PBF |
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Hersteller: Vishay Semiconductors
MOSFETs N-Chan 500V 2.4 Amp
MOSFETs N-Chan 500V 2.4 Amp
auf Bestellung 9623 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.12 EUR |
| 10+ | 1.48 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.9 EUR |
| 3000+ | 0.83 EUR |
| 6000+ | 0.78 EUR |
| IRFU420PBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 500V 2.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 1815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.52 EUR |
| 75+ | 1.61 EUR |
| 150+ | 1.45 EUR |
| 525+ | 1.23 EUR |
| 1050+ | 1.13 EUR |