| Anzahl | Privatkunde |
|---|---|
| 232+ | 0.77 EUR |
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Lieferzeit:
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Mindestmenge:
232 Stücke
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Technische Details IRFU420PBF Vishay
Description: MOSFET N-CH 500V 2.4A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRFU420PBF nach Preis ab 0.77 EUR bis 4.55 EUR
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IRFU420PBF | Vishay |
 Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK |
auf Bestellung 311 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | Vishay |
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | Vishay Semiconductors |
MOSFETs N-Chan 500V 2.4 Amp |
auf Bestellung 9568 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU420PBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 2.4A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
auf Bestellung 757 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU420PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1729 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFU420PBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK
auf Bestellung 311 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 232+ | 0.77 EUR |
| IRFU420PBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 1.18 EUR |
| 161+ | 1.09 EUR |
| 300+ | 1.04 EUR |
| 525+ | 0.98 EUR |
| 1050+ | 0.93 EUR |
| 2025+ | 0.88 EUR |
| IRFU420PBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 500V 2.4 Amp
MOSFETs N-Chan 500V 2.4 Amp
auf Bestellung 9568 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.07 EUR |
| 3000+ | 0.99 EUR |
| 6000+ | 0.95 EUR |
| IRFU420PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 500V 2.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.55 EUR |
| 10+ | 2.92 EUR |
| 75+ | 2.08 EUR |
| 150+ | 1.87 EUR |
| 525+ | 1.58 EUR |
| IRFU420PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1729 Stücke:
Lieferzeit 14-21 Tag (e)