auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 210+ | 0.68 EUR |
| 533+ | 0.26 EUR |
| 538+ | 0.25 EUR |
| 540+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFU420PBF Vishay
Description: MOSFET N-CH 500V 2.4A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRFU420PBF nach Preis ab 0.43 EUR bis 2.09 EUR
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IRFU420PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK |
auf Bestellung 614 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK |
auf Bestellung 4200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1989 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFU420PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1989 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 500V 2.4 Amp |
auf Bestellung 12830 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU420PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 2.4A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
auf Bestellung 2875 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU420PBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK |
auf Bestellung 20425 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU420PBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |