IRFU5305 International Rectifier


IRFR%2CU5305.pdf
Hersteller: International Rectifier
P-MOSFET 31A 55V 110W IRFU5305 TIRFU5305
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Technische Details IRFU5305 International Rectifier

Description: MOSFET P-CH 55V 31A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: IPAK (TO-251AA), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.

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IRFU5305 IRFU5305 Infineon Technologies IRFR%2CU5305.pdf description Description: MOSFET P-CH 55V 31A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 75 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFU5305 description IRFR%2CU5305.pdf
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 75 Stücke
Im Einkaufswagen  Stück im Wert von  UAH