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IRFU6215PBF

IRFU6215PBF Infineon / IR


Infineon-IRFR6215-DS-v01_02-EN-1732087.pdf Hersteller: Infineon / IR
MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC
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Technische Details IRFU6215PBF Infineon / IR

Description: MOSFET P-CH 150V 13A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.

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IRFU6215PBF IRFU6215PBF
Produktcode: 101060
irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Verschiedene Bauteile > Other components 3
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IRFU6215PBF IRFU6215PBF Hersteller : Infineon Technologies 650infineon-irfr6215-ds-v01_02-en.pdffileid5546d462533600a4015356359.pdf Trans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
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IRFU6215PBF IRFU6215PBF Hersteller : Infineon Technologies irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Description: MOSFET P-CH 150V 13A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
IRFU6215PBF IRFU6215PBF Hersteller : INFINEON TECHNOLOGIES irfr6215pbf.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
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