IRFU7440PBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 90A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
auf Bestellung 4323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 409+ | 1.2 EUR |
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Technische Details IRFU7440PBF Infineon Technologies
Description: MOSFET N-CH 40V 90A IPAK, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V.
Weitere Produktangebote IRFU7440PBF nach Preis ab 0.89 EUR bis 1.55 EUR
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IRFU7440PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU7440PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) IPAK Tube |
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IRFU7440PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 140W Case: IPAK Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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IRFU7440PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 90A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFU7440PBF | Hersteller : Infineon Technologies |
MOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, I-Pak |
Produkt ist nicht verfügbar |
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IRFU7440PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 140W Case: IPAK Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |