| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.96 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.87 EUR |
| 3000+ | 0.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFU9014PBF Vishay Semiconductors
Description: VISHAY - IRFU9014PBF - Leistungs-MOSFET, p-Kanal, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 5.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 30W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: TO-251AA, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.5ohm.
Weitere Produktangebote IRFU9014PBF nach Preis ab 0.55 EUR bis 1.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRFU9014PBF | Vishay Siliconix |
 Description: MOSFET P-CH 60V 5.1A TO251AAInput Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
auf Bestellung 2112 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU9014PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251 Kind of package: tube Case: IPAK; TO251 Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Gate charge: 12nC On-state resistance: 0.5Ω Power dissipation: 25W Gate-source voltage: ±20V |
auf Bestellung 1016 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU9014PBF | VISHAY |
Description: VISHAY - IRFU9014PBF - Leistungs-MOSFET, p-Kanal, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 30W SVHC: Lead (04-Feb-2026) Bauform - Transistor: TO-251AA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.5ohm |
auf Bestellung 1664 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFU9014PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET P-CH 60V 5.1A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 2112 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 75+ | 0.98 EUR |
| 150+ | 0.96 EUR |
| 525+ | 0.94 EUR |
| 1050+ | 0.9 EUR |
| 2025+ | 0.83 EUR |
| IRFU9014PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251
Kind of package: tube
Case: IPAK; TO251
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Gate charge: 12nC
On-state resistance: 0.5Ω
Power dissipation: 25W
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251
Kind of package: tube
Case: IPAK; TO251
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Gate charge: 12nC
On-state resistance: 0.5Ω
Power dissipation: 25W
Gate-source voltage: ±20V
auf Bestellung 1016 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 88+ | 0.82 EUR |
| 111+ | 0.65 EUR |
| 150+ | 0.61 EUR |
| 525+ | 0.57 EUR |
| 750+ | 0.55 EUR |
| IRFU9014PBF |
|
Hersteller: VISHAY
Description: VISHAY - IRFU9014PBF - Leistungs-MOSFET, p-Kanal, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 30W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-251AA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.5ohm
Description: VISHAY - IRFU9014PBF - Leistungs-MOSFET, p-Kanal, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 30W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-251AA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.5ohm
auf Bestellung 1664 Stücke:
Lieferzeit 14-21 Tag (e)