auf Bestellung 2744 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.99 EUR |
| 10+ | 2.08 EUR |
| 25+ | 1.32 EUR |
| 100+ | 1.27 EUR |
| 250+ | 1.23 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.09 EUR |
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Technische Details IRFU9214PBF Vishay Semiconductors
Description: MOSFET P-CH 250V 2.7A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V.
Weitere Produktangebote IRFU9214PBF nach Preis ab 1.21 EUR bis 3.8 EUR
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IRFU9214PBF | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 250V 2.7A TO251AAPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
auf Bestellung 1395 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU9214PBF | Hersteller : Vishay |
Trans MOSFET P-CH Si 250V 2.7A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |
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| IRFU9214PBF | Hersteller : VISHAY |
IRFU9214PBF THT P channel transistors |
Produkt ist nicht verfügbar |