IRFU9310PBF
Produktcode: 73659
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote IRFU9310PBF nach Preis ab 0.5 EUR bis 3.73 EUR
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IRFU9310PBF | Vishay |
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK |
auf Bestellung 2110 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU9310PBF | Vishay |
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU9310PBF | Vishay |
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK |
auf Bestellung 2048 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU9310PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; IPAK,TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 2033 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU9310PBF | Vishay Siliconix |
Description: MOSFET P-CH 400V 1.8A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU9310PBF | Vishay Semiconductors |
MOSFETs P-Chan 400V 1.8 Amp |
auf Bestellung 20998 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFU9310PBF |
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Hersteller: Vishay
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 1.37 EUR |
| 119+ | 1.19 EUR |
| 150+ | 1.04 EUR |
| 525+ | 0.89 EUR |
| 1050+ | 0.82 EUR |
| 2025+ | 0.75 EUR |
| IRFU9310PBF |
|
Hersteller: Vishay
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 108+ | 1.37 EUR |
| 120+ | 1.21 EUR |
| 150+ | 1.07 EUR |
| 525+ | 0.94 EUR |
| 1050+ | 0.89 EUR |
| 2025+ | 0.84 EUR |
| IRFU9310PBF |
|
Hersteller: Vishay
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) IPAK
auf Bestellung 2048 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 71+ | 2.07 EUR |
| 98+ | 1.48 EUR |
| 150+ | 1.31 EUR |
| 525+ | 1.08 EUR |
| 1050+ | 0.98 EUR |
| 2025+ | 0.89 EUR |
| IRFU9310PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; 50W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2033 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 60+ | 1.19 EUR |
| 67+ | 1.07 EUR |
| 74+ | 0.98 EUR |
| 78+ | 0.92 EUR |
| 150+ | 0.83 EUR |
| 525+ | 0.67 EUR |
| 1050+ | 0.58 EUR |
| 2025+ | 0.5 EUR |
| IRFU9310PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: MOSFET P-CH 400V 1.8A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.68 EUR |
| 75+ | 1.68 EUR |
| 150+ | 1.52 EUR |
| 525+ | 1.28 EUR |
| 1050+ | 1.18 EUR |
| IRFU9310PBF |
|
Hersteller: Vishay Semiconductors
MOSFETs P-Chan 400V 1.8 Amp
MOSFETs P-Chan 400V 1.8 Amp
auf Bestellung 20998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.73 EUR |
| 10+ | 1.71 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.12 EUR |