IRFZ44NSPBF
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.64 EUR |
| 10+ | 2.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFZ44NSPBF IR
Description: MOSFET N-CH 55V 49A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V, Power Dissipation (Max): 3.8W (Ta), 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V.
Weitere Produktangebote IRFZ44NSPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IRFZ44NSPBF Produktcode: 37486 |
 Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
||
 |
IRFZ44NSPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 49A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
IRFZ44NSPBF | Hersteller : Infineon Technologies |
MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC |
Produkt ist nicht verfügbar |
|
 |
IRFZ44NSPBF | Hersteller : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |