IRFZ44NSTRRPBF
Produktcode: 31849
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller: IR
Gehäuse: D2PAK (TO-263)
Drain-Source-Spannung Uds, V: 55 V
Drain-Strom Idd, A: 49 A
Durchlasswiderstand Rds(on), Ohm: 0,0175 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1470/63
Montage: SMD
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFZ44NSTRRPBF IR
- MOSFET
- Transistor Type:MOSFET
- Transist
Weitere Produktangebote IRFZ44NSTRRPBF nach Preis ab 2.05 EUR bis 2.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
 |
IRFZ44NSTRRPBF | International Rectifier |
 Description: HEXFET POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
| IRFZ44NSTRRPBF | International Rectifier HiRel Products |
Trans MOSFET N-CH 55V 49A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IRFZ44NSTRRPBF |
|
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 258+ | 2.13 EUR |
| IRFZ44NSTRRPBF |
|
Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH 55V 49A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 55V 49A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 323+ | 2.05 EUR |