IRG4BC20UDPBF Infineon Technologies
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Technische Details IRG4BC20UDPBF Infineon Technologies
Description: IGBT 600V 13A TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 39ns/93ns, Switching Energy: 160µJ (on), 130µJ (off), Test Condition: 480V, 6.5A, 50Ohm, 15V, Gate Charge: 27 nC, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 52 A, Power - Max: 60 W.
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IRG4BC20UDPBF | Hersteller : Infineon Technologies |
 Description: IGBT 600V 13A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 39ns/93ns Switching Energy: 160µJ (on), 130µJ (off) Test Condition: 480V, 6.5A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 52 A Power - Max: 60 W |
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IRG4BC20UDPBF | Hersteller : Infineon Technologies |
IGBTs 600V UltraFast 8-60kHz |
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IRG4BC20UDPBF | Hersteller : Infineon (IRF) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 60W Case: TO220AB Mounting: THT Kind of package: tube |
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