Technische Details IRG4BC30WPBF
- IGBT, 600V, 23A, TO-220
- Transistor Type:IGBT
- Transistor Polarity:N Channel
- Voltage Vces:600V
- Max Current Ic Continuous a:23A
- Max Voltage Vce Sat:2.7V
- Power Dissipation:100W
- Case Style:TO-220
- Termination Type:Through Hole
- Collector-to-Emitter Breakdown Voltage:600V
- Current Temperature:25`C
- Fall Time Tf:150ns
- Full Power Rating Temperature:25`C
- Max Fall Time:150ns
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation Pd:100W
- Pulsed Current Icm:92A
- Rise Time:17ns
Weitere Produktangebote IRG4BC30WPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRG4BC30WPBF | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRG4BC30WPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 23A 100W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 25ns/99ns Switching Energy: 130µJ (on), 130µJ (off) Test Condition: 480V, 12A, 23Ohm, 15V Gate Charge: 51 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
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IRG4BC30WPBF | Hersteller : Infineon Technologies |
IGBT Transistors 600V Warp 60-150kHz |
Produkt ist nicht verfügbar |