IRG4BH20K-L Infineon
Hersteller: Infineon
Trans IGBT Chip N-CH 1200V 11A 60000mW IRG4BH20K-L TIRG4bh20k-L
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.84 EUR |
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Technische Details IRG4BH20K-L Infineon
Description: IGBT 1200V 11A TO-262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A, Supplier Device Package: TO-262, Td (on/off) @ 25°C: 23ns/93ns, Switching Energy: 450µJ (on), 440µJ (off), Test Condition: 960V, 5A, 50Ohm, 15V, Gate Charge: 28 nC, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 60 W.
Weitere Produktangebote IRG4BH20K-L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRG4BH20K-L | Infineon Technologies |
Description: IGBT 1200V 11A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Supplier Device Package: TO-262 Td (on/off) @ 25°C: 23ns/93ns Switching Energy: 450µJ (on), 440µJ (off) Test Condition: 960V, 5A, 50Ohm, 15V Gate Charge: 28 nC Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 22 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRG4BH20K-L |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
Description: IGBT 1200V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH

