IRG4BH20K-S International Rectifier

Transistor IGBT ; 1200V; 20V; 11A; 22A; 60W; 3,5V~6,5V; 43nC; -55°C~150°C; IRG4BH20K-S TIRG4bh20k-s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
10+ | 3.03 EUR |
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Technische Details IRG4BH20K-S International Rectifier
Description: IGBT 1200V 11A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 23ns/93ns, Switching Energy: 450µJ (on), 440µJ (off), Test Condition: 960V, 5A, 50Ohm, 15V, Gate Charge: 28 nC, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 60 W.
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IRG4BH20K-S | Hersteller : Infineon Technologies |
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IRG4BH20K-S | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 23ns/93ns Switching Energy: 450µJ (on), 440µJ (off) Test Condition: 960V, 5A, 50Ohm, 15V Gate Charge: 28 nC Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 22 A Power - Max: 60 W |
Produkt ist nicht verfügbar |