Technische Details IRG4PH30KDPBF
- IGBT, TO-247
- Transistor Type:IGBT
- Max Voltage Vce Sat:3.1V
- Collector-to-Emitter Breakdown Voltage:1200V
- No. of Pins:3
- Case Style:TO-247
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Current Ic Continuous a:20A
- Min Short Circuit Withstand Time:10es
- No. of Transistors:1
- Power Dissipation:100W
- Power Dissipation Pd:100W
- Pulsed Current Icm:40A
- Rise Time:79ns
- Termination Type:Through Hole
- Transistor Polarity:N Channel
- Typ Fall Time:97ns
- Voltage Vces:1200V
Weitere Produktangebote IRG4PH30KDPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IRG4PH30KDPBF | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube |
Produkt ist nicht verfügbar |
|
 |
IRG4PH30KDPBF | Hersteller : Infineon Technologies |
Description: IGBT 1200V 20A 100W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 39ns/220ns Switching Energy: 950µJ (on), 1.15mJ (off) Test Condition: 800V, 10A, 23Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 40 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
|
 |
IRG4PH30KDPBF | Hersteller : Infineon Technologies |
IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT |
Produkt ist nicht verfügbar |