IRG4RC10UTRPBF Infineon Technologies
auf Bestellung 1734 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 579+ | 0.94 EUR |
| 1000+ | 0.83 EUR |
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Technische Details IRG4RC10UTRPBF Infineon Technologies
Description: IGBT 600V 8.5A TO-252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A, Supplier Device Package: TO-252AA (DPAK), Td (on/off) @ 25°C: 19ns/116ns, Switching Energy: 80µJ (on), 160µJ (off), Test Condition: 480V, 5A, 100Ohm, 15V, Gate Charge: 15 nC, Current - Collector (Ic) (Max): 8.5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 34 A, Power - Max: 38 W.
Weitere Produktangebote IRG4RC10UTRPBF nach Preis ab 0.83 EUR bis 2.55 EUR
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IRG4RC10UTRPBF | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 8.5A 38W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1256 Stücke: Lieferzeit 14-21 Tag (e) |
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IRG4RC10UTRPBF | Hersteller : International Rectifier |
Description: IGBT 600V 8.5A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Supplier Device Package: DPAK Td (on/off) @ 25°C: 19ns/116ns Switching Energy: 80µJ (on), 160µJ (off) Test Condition: 480V, 5A, 100Ohm, 15V Gate Charge: 15 nC Part Status: Active Current - Collector (Ic) (Max): 8.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 34 A Power - Max: 38 W |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4RC10UTRPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 8.5A TO-252AA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Supplier Device Package: TO-252AA (DPAK) Td (on/off) @ 25°C: 19ns/116ns Switching Energy: 80µJ (on), 160µJ (off) Test Condition: 480V, 5A, 100Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 8.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 34 A Power - Max: 38 W |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4RC10UTRPBF | Hersteller : Infineon Technologies |
IGBT Transistors 600V UltraFast 8-60kHz |
auf Bestellung 1262 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4RC10UTRPBF | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRG4RC10UTRPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 8.5A TO-252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Supplier Device Package: TO-252AA (DPAK) Td (on/off) @ 25°C: 19ns/116ns Switching Energy: 80µJ (on), 160µJ (off) Test Condition: 480V, 5A, 100Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 8.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 34 A Power - Max: 38 W |
Produkt ist nicht verfügbar |