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IRG8P08N120KD-EPBF

IRG8P08N120KD-EPBF International Rectifier

IRSD-S-A0000577029-1.pdf?t.download=true&u=5oefqw Hersteller: International Rectifier
Description: IRG8P08N120 - DISCRETE IGBT WITH
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
118+4.26 EUR
Mindestbestellmenge: 118
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Technische Details IRG8P08N120KD-EPBF International Rectifier

Description: IRG8P08N120 - DISCRETE IGBT WITH, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 20ns/160ns, Switching Energy: 300µJ (on), 300µJ (off), Test Condition: 600V, 5A, 47Ohm, 15V, Gate Charge: 45 nC, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 89 W.

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IRG8P08N120KD-EPBF IRG8P08N120KD-EPBF Hersteller : Infineon / IR irg8p08n120kdpbf-1302918.pdf IGBT Transistors 1200V IGBT GEN8
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
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