IRG8P50N120KD-EPBF International Rectifier
Hersteller: International Rectifier
Description: IGBT 1200V 80A TO-247AD
Power - Max: 350 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 315 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 35ns/190ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 170 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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Technische Details IRG8P50N120KD-EPBF International Rectifier
Description: IGBT 1200V 80A TO-247AD, Power - Max: 350 W, Current - Collector Pulsed (Icm): 105 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 315 nC, Test Condition: 600V, 35A, 5Ohm, 15V, Switching Energy: 2.3mJ (on), 1.9mJ (off), Td (on/off) @ 25°C: 35ns/190ns, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A, Reverse Recovery Time (trr): 170 ns, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
Weitere Produktangebote IRG8P50N120KD-EPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRG8P50N120KD-EPBF | Infineon / IR |
IGBT Transistors 1200V IGBT GEN8 |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRG8P50N120KD-EPBF |
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Hersteller: Infineon / IR
IGBT Transistors 1200V IGBT GEN8
IGBT Transistors 1200V IGBT GEN8
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)


