IRGB4640DPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE 600V 40A TO-220
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 75 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
Supplier Device Package: TO-220AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IRGB4640DPBF Infineon Technologies
Description: DIODE 600V 40A TO-220, Power - Max: 250 W, Current - Collector Pulsed (Icm): 72 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 65 A, Gate Charge: 75 nC, Test Condition: 400V, 24A, 10Ohm, 15V, Switching Energy: 115µJ (on), 600µJ (off), Td (on/off) @ 25°C: 41ns/104ns, Supplier Device Package: TO-220AC, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A, Reverse Recovery Time (trr): 89 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRGB4640DPBF | Infineon / IR |
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Hersteller: Infineon / IR
IGBT Transistors IGBT DISCRETES
IGBT Transistors IGBT DISCRETES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


