IRGB4640DPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220AC
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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Technische Details IRGB4640DPBF Infineon Technologies
Description: DIODE 600V 40A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 89 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A, Supplier Device Package: TO-220AC, Td (on/off) @ 25°C: 41ns/104ns, Switching Energy: 115µJ (on), 600µJ (off), Test Condition: 400V, 24A, 10Ohm, 15V, Gate Charge: 75 nC, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 72 A, Power - Max: 250 W.
Weitere Produktangebote IRGB4640DPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRGB4640DPBF | Hersteller : Infineon / IR |
IGBT Transistors IGBT DISCRETES |
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