IRGB4B60KPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 12A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 130µJ (on), 83µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
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Technische Details IRGB4B60KPBF Infineon Technologies
Description: IGBT NPT 600V 12A TO-220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/100ns, Switching Energy: 130µJ (on), 83µJ (off), Test Condition: 400V, 4A, 100Ohm, 15V, Gate Charge: 12 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 63 W.
Weitere Produktangebote IRGB4B60KPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRGB4B60KPBF | Infineon / IR |
IGBT Transistors 600V Low VCEon |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRGB4B60KPBF |
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Hersteller: Infineon / IR
IGBT Transistors 600V Low VCEon
IGBT Transistors 600V Low VCEon
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)


