IRGIB10B60KD1P Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 16A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 156µJ (on), 165µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 41 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 44 W
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Technische Details IRGIB10B60KD1P Infineon Technologies
Description: IGBT NPT 600V 16A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 79 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: TO-220AB Full-Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/180ns, Switching Energy: 156µJ (on), 165µJ (off), Test Condition: 400V, 10A, 50Ohm, 15V, Gate Charge: 41 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 32 A, Power - Max: 44 W.
Weitere Produktangebote IRGIB10B60KD1P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRGIB10B60KD1P | Infineon / IR |
IGBT Transistors 600V Low-Vceon |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRGIB10B60KD1P |
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Hersteller: Infineon / IR
IGBT Transistors 600V Low-Vceon
IGBT Transistors 600V Low-Vceon
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


