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IRGIB6B60KDPBF Infineon Technologies


irgib6b60kdpbf.pdf?fileId=5546d462533600a40153565259dd2434
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 11A TO220AB FP
Power - Max: 38 W
Current - Collector Pulsed (Icm): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 18.2 nC
Test Condition: 400V, 5A, 100Ohm, 15V
Switching Energy: 110µJ (on), 135µJ (off)
Td (on/off) @ 25°C: 25ns/215ns
IGBT Type: NPT
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Technische Details IRGIB6B60KDPBF Infineon Technologies

Description: IGBT NPT 600V 11A TO220AB FP, Power - Max: 38 W, Current - Collector Pulsed (Icm): 22 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 11 A, Gate Charge: 18.2 nC, Test Condition: 400V, 5A, 100Ohm, 15V, Switching Energy: 110µJ (on), 135µJ (off), Td (on/off) @ 25°C: 25ns/215ns, IGBT Type: NPT, Supplier Device Package: TO-220AB Full-Pak, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A, Reverse Recovery Time (trr): 70 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.

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IRGIB6B60KDPBF IRGIB6B60KDPBF Infineon / IR Infineon-IRGIB6B60KD-DS-vNA-EN-1732763.pdf IGBT Transistors 600V Low-Vceon
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IRGIB6B60KDPBF Infineon-IRGIB6B60KD-DS-vNA-EN-1732763.pdf
Hersteller: Infineon / IR
IGBT Transistors 600V Low-Vceon
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