IRGIB7B60KDPBF Infineon Technologies
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Technische Details IRGIB7B60KDPBF Infineon Technologies
Description: IGBT 600V 12A 39W TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A, Supplier Device Package: TO-220AB Full-Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/140ns, Switching Energy: 160µJ (on), 160µJ (off), Test Condition: 400V, 8A, 50Ohm, 15V, Gate Charge: 29 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 39 W.
Weitere Produktangebote IRGIB7B60KDPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IRGIB7B60KDPBF | Hersteller : INFINEON TECHNOLOGIES |
 IRGIB7B60KDPBF THT IGBT transistors |
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IRGIB7B60KDPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 12A 39W TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A Supplier Device Package: TO-220AB Full-Pak IGBT Type: NPT Td (on/off) @ 25°C: 23ns/140ns Switching Energy: 160µJ (on), 160µJ (off) Test Condition: 400V, 8A, 50Ohm, 15V Gate Charge: 29 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 24 A Power - Max: 39 W |
Produkt ist nicht verfügbar |