Technische Details IRGP35B60PDPBF
- IGBT, 600V, 40A, TO-247AC
- Transistor Type:IGBT
- Transistor Polarity:N Channel
- Voltage Vces:600V
- Max Current Ic Continuous a:40A
- Max Voltage Vce Sat:2.15V
- Power Dissipation:308W
- Case Style:TO-247AC
- Termination Type:Through Hole
- Collector-to-Emitter Breakdown Voltage:600V
- Power Dissipation Pd:308W
- Pulsed Current Icm:120A
- Rise Time:6ns
Weitere Produktangebote IRGP35B60PDPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRGP35B60PDPBF | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube |
Produkt ist nicht verfügbar |
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IRGP35B60PDPBF | Hersteller : Infineon Technologies |
Description: IGBT NPT 600V 60A TO-247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A Supplier Device Package: TO-247AC IGBT Type: NPT Td (on/off) @ 25°C: 26ns/110ns Switching Energy: 220µJ (on), 215µJ (off) Test Condition: 390V, 22A, 3.3Ohm, 15V Gate Charge: 160 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 308 W |
Produkt ist nicht verfügbar |
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IRGP35B60PDPBF | Hersteller : Infineon Technologies |
IGBT Transistors 600V Warp2 150kHz |
Produkt ist nicht verfügbar |