IRGP35B60PDPBF

Hersteller: International Rectifier
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Транзистори

Hersteller: Infineon Technologies
Description: IGBT NPT 600V 60A TO-247AC
Power - Max: 308 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Switching Energy: 220µJ (on), 215µJ (off)
Td (on/off) @ 25°C: 26ns/110ns
IGBT Type: NPT
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
Reverse Recovery Time (trr): 42 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge: 160 nC
Test Condition: 390V, 22A, 3.3Ohm, 15V

Hersteller: Infineon Technologies
IGBT Transistors 600V Warp2 150kHz

Hersteller: INFINEON
Description: INFINEON - IRGP35B60PDPBF - IGBT, 60 A, 2.15 V, 308 W, 600 V, TO-247AC, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.15
DC-Kollektorstrom: 60
Anzahl der Pins: 3
Bauform - Transistor: TO-247AC
Kollektor-Emitter-Spannung V(br)ceo: 600
Verlustleistung Pd: 308
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (27-Jun-2018)

Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube