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IRGP4650D-EPBF Infineon Technologies

Name: IRGP4650D-EPBF
Brand: Infineon Technologies
SKU: 21349427-3
Price: 11.57 EUR
Availability: InStock

IRSD-S-A0000175678-1.pdf?t.download=true&u=5oefqw

Hersteller: Infineon Technologies
Description: IGBT 600V 76A 268W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 46ns/105ns
Switching Energy: 390µJ (on), 632µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 268 W

auf Bestellung 14489 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
63+	11.57 EUR

Mindestbestellmenge: 63

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Technische Details IRGP4650D-EPBF Infineon Technologies

Description: IGBT 600V 76A 268W TO247AD, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 120 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 46ns/105ns, Switching Energy: 390µJ (on), 632µJ (off), Test Condition: 400V, 35A, 10Ohm, 15V, Gate Charge: 104 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 76 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 268 W.

Weitere Produktangebote IRGP4650D-EPBF

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
IRGP4650D-EPBF	Hersteller : Infineon / IR	IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC	auf Bestellung 59 Stücke: Lieferzeit 14-28 Tag (e)
IRGP4650D-EPBF	Hersteller : Infineon Technologies	Description: IGBT 600V 76A 268W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 46ns/105ns Switching Energy: 390µJ (on), 632µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Obsolete Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 105 A Power - Max: 268 W	Produkt ist nicht verfügbar
IRGP4650D-EPBF	Hersteller : INFINEON TECHNOLOGIES	Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 76A; 268W; TO247-3; single transistor Collector-emitter voltage: 600V Power dissipation: 268W Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Kind of package: tube Semiconductor structure: single transistor Case: TO247-3 Collector current: 76A Mounting: THT	Produkt ist nicht verfügbar