IRGP4790-EPBF Infineon Technologies


IRGP4790%28-E%29PbF.pdf
Hersteller: Infineon Technologies
Description: IGBT 650V 140A TO-247AD
Power - Max: 455 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 140 A
Gate Charge: 210 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 50ns/200ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IRGP4790-EPBF Infineon Technologies

Description: IGBT 650V 140A TO-247AD, Power - Max: 455 W, Current - Collector Pulsed (Icm): 225 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 140 A, Gate Charge: 210 nC, Test Condition: 400V, 75A, 10Ohm, 15V, Switching Energy: 2.5mJ (on), 2.2mJ (off), Td (on/off) @ 25°C: 50ns/200ns, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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IRGP4790-EPBF IRGP4790-EPBF Infineon / IR irgp4790pbf-1994926.pdf IGBT Transistors IGBT DISCRETES
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IRGP4790-EPBF irgp4790pbf-1994926.pdf
Hersteller: Infineon / IR
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