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IRGP50B60PDPBF

IRGP50B60PDPBF Infineon Technologies


infineon-irgp50b60pd-datasheet-v01_00-en.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube
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Technische Details IRGP50B60PDPBF Infineon Technologies

Description: IGBT NPT 600V 75A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, Supplier Device Package: TO-247AC, IGBT Type: NPT, Td (on/off) @ 25°C: 34ns/130ns, Switching Energy: 360µJ (on), 380µJ (off), Test Condition: 390V, 33A, 3.3Ohm, 15V, Gate Charge: 240 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 370 W.

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IRGP50B60PDPBF IRGP50B60PDPBF Hersteller : Infineon Technologies irgp50b60pdpbf.pdf?fileId=5546d462533600a401535656ce5f248c Description: IGBT NPT 600V 75A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
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IRGP50B60PDPBF IRGP50B60PDPBF Hersteller : Infineon / IR Infineon-IRGP50B60PD-DataSheet-v01_00-EN-1732995.pdf IGBT Transistors 600V Warp2 150kHz
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