IRGP6650DPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT 600V 80A TO-247AC
Power - Max: 306 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 75 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 300µJ (on), 630µJ (off)
Td (on/off) @ 25°C: 40ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Part Status: Active
Packaging: Bulk
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Technische Details IRGP6650DPBF Infineon Technologies
Description: IGBT 600V 80A TO-247AC, Power - Max: 306 W, Current - Collector Pulsed (Icm): 105 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 75 nC, Test Condition: 400V, 35A, 10Ohm, 15V, Switching Energy: 300µJ (on), 630µJ (off), Td (on/off) @ 25°C: 40ns/105ns, Supplier Device Package: TO-247AC, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A, Reverse Recovery Time (trr): 50 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Part Status: Active, Packaging: Bulk.
Weitere Produktangebote IRGP6650DPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IRGP6650DPBF | Infineon / IR |
IGBT Transistors 600V UltraFast IGBT TO-247 |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRGP6650DPBF |
|
Hersteller: Infineon / IR
IGBT Transistors 600V UltraFast IGBT TO-247
IGBT Transistors 600V UltraFast IGBT TO-247
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)