IRGR2B60KDPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6.3A TO-252AA
Gate Charge: 12 nC
Test Condition: 400V, 2A, 100Ohm, 15V
Switching Energy: 74µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 11ns/150ns
IGBT Type: NPT
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Power - Max: 35 W
Current - Collector Pulsed (Icm): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6.3 A
Produktrezensionen
Produktbewertung abgeben
Technische Details IRGR2B60KDPBF Infineon Technologies
Description: IGBT NPT 600V 6.3A TO-252AA, Gate Charge: 12 nC, Test Condition: 400V, 2A, 100Ohm, 15V, Switching Energy: 74µJ (on), 39µJ (off), Td (on/off) @ 25°C: 11ns/150ns, IGBT Type: NPT, Supplier Device Package: TO-252AA (DPAK), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A, Reverse Recovery Time (trr): 68 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Power - Max: 35 W, Current - Collector Pulsed (Icm): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 6.3 A.
Weitere Produktangebote IRGR2B60KDPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IRGR2B60KDPBF | Infineon / IR |
IGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V |
auf Bestellung 551 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRGR2B60KDPBF |
|
Hersteller: Infineon / IR
IGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V
IGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V
auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)