IRGR2B60KDPBF

IRGR2B60KDPBF Infineon Technologies


IRGR2B60KDPBF.pdf Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6.3A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
auf Bestellung 933 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
408+1.78 EUR
Mindestbestellmenge: 408
Produktrezensionen
Produktbewertung abgeben

Technische Details IRGR2B60KDPBF Infineon Technologies

Description: IGBT NPT 600V 6.3A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A, Supplier Device Package: TO-252AA (DPAK), IGBT Type: NPT, Td (on/off) @ 25°C: 11ns/150ns, Switching Energy: 74µJ (on), 39µJ (off), Test Condition: 400V, 2A, 100Ohm, 15V, Gate Charge: 12 nC, Current - Collector (Ic) (Max): 6.3 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 8 A, Power - Max: 35 W.

Weitere Produktangebote IRGR2B60KDPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRGR2B60KDPBF IRGR2B60KDPBF Hersteller : Infineon / IR irsds13414_1-2271415.pdf IGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V
auf Bestellung 551 Stücke:
Lieferzeit 14-28 Tag (e)
IRGR2B60KDPBF IRGR2B60KDPBF Hersteller : Infineon Technologies irgr2b60kdpbf.pdf Trans IGBT Chip N-CH 600V 6.3A 35000mW 3-Pin(2+Tab) DPAK Tube
Produkt ist nicht verfügbar
IRGR2B60KDPBF IRGR2B60KDPBF Hersteller : Infineon Technologies IRGR2B60KDPBF.pdf Description: IGBT NPT 600V 6.3A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
Produkt ist nicht verfügbar