IRGR2B60KDTRRPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6.3A TO252AA
Power - Max: 35 W
Current - Collector Pulsed (Icm): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 6.3 A
Gate Charge: 12 nC
Test Condition: 400V, 2A, 100Ohm, 15V
Switching Energy: 74µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 11ns/150ns
IGBT Type: NPT
Supplier Device Package: TO-252AA (DPAK)
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Technische Details IRGR2B60KDTRRPBF Infineon Technologies
Description: IGBT NPT 600V 6.3A TO252AA, Power - Max: 35 W, Current - Collector Pulsed (Icm): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A, Reverse Recovery Time (trr): 68 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Current - Collector (Ic) (Max): 6.3 A, Gate Charge: 12 nC, Test Condition: 400V, 2A, 100Ohm, 15V, Switching Energy: 74µJ (on), 39µJ (off), Td (on/off) @ 25°C: 11ns/150ns, IGBT Type: NPT, Supplier Device Package: TO-252AA (DPAK).
Weitere Produktangebote IRGR2B60KDTRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRGR2B60KDTRRPBF | Infineon / IR |
IGBT Transistors 600V Low VCEon Trench IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRGR2B60KDTRRPBF |
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Hersteller: Infineon / IR
IGBT Transistors 600V Low VCEon Trench IGBT
IGBT Transistors 600V Low VCEon Trench IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


