IRGR3B60KD2TRLP Infineon Technologies
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Technische Details IRGR3B60KD2TRLP Infineon Technologies
Description: IGBT NPT 600V 7.8A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 77 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A, Supplier Device Package: TO-252AA (DPAK), IGBT Type: NPT, Td (on/off) @ 25°C: 18ns/110ns, Switching Energy: 62µJ (on), 39µJ (off), Test Condition: 400V, 3A, 100Ohm, 15V, Gate Charge: 13 nC, Current - Collector (Ic) (Max): 7.8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 15.6 A, Power - Max: 52 W.
Weitere Produktangebote IRGR3B60KD2TRLP
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IRGR3B60KD2TRLP | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 7.8A 52000mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRGR3B60KD2TRLP | Hersteller : Infineon Technologies |
Description: IGBT NPT 600V 7.8A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 77 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Supplier Device Package: TO-252AA (DPAK) IGBT Type: NPT Td (on/off) @ 25°C: 18ns/110ns Switching Energy: 62µJ (on), 39µJ (off) Test Condition: 400V, 3A, 100Ohm, 15V Gate Charge: 13 nC Current - Collector (Ic) (Max): 7.8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 15.6 A Power - Max: 52 W |
Produkt ist nicht verfügbar |
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IRGR3B60KD2TRLP | Hersteller : Infineon Technologies |
Description: IGBT NPT 600V 7.8A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 77 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Supplier Device Package: TO-252AA (DPAK) IGBT Type: NPT Td (on/off) @ 25°C: 18ns/110ns Switching Energy: 62µJ (on), 39µJ (off) Test Condition: 400V, 3A, 100Ohm, 15V Gate Charge: 13 nC Current - Collector (Ic) (Max): 7.8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 15.6 A Power - Max: 52 W |
Produkt ist nicht verfügbar |
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IRGR3B60KD2TRLP | Hersteller : Infineon / IR |
IGBT Transistors IGBT DISCRETES |
Produkt ist nicht verfügbar |