IRGS6B60KPBF Infineon Technologies
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Technische Details IRGS6B60KPBF Infineon Technologies
Description: IGBT NPT 600V 13A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A, Supplier Device Package: D2PAK, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/215ns, Switching Energy: 110µJ (on), 135µJ (off), Test Condition: 400V, 5A, 100Ohm, 15V, Gate Charge: 18.2 nC, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 26 A, Power - Max: 90 W.
Weitere Produktangebote IRGS6B60KPBF
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IRGS6B60KPBF | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 13A 90000mW 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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IRGS6B60KPBF | Hersteller : Infineon Technologies |
Description: IGBT NPT 600V 13A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
Produkt ist nicht verfügbar |