Technische Details IRGSL15B60KDPBF Infineon Technologies
Description: IGBT NPT 600V 31A TO262-3, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A, Supplier Device Package: PG-TO262-3, IGBT Type: NPT, Td (on/off) @ 25°C: 34ns/184ns, Switching Energy: 220µJ (on), 340µJ (off), Test Condition: 400V, 15A, 22Ohm, 15V, Gate Charge: 56 nC, Part Status: Active, Current - Collector (Ic) (Max): 31 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 62 A, Power - Max: 208 W.
Weitere Produktangebote IRGSL15B60KDPBF nach Preis ab 3.06 EUR bis 3.06 EUR
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IRGSL15B60KDPBF | International Rectifier |
 Description: IGBT NPT 600V 31A TO262-3Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: PG-TO262-3 IGBT Type: NPT Td (on/off) @ 25°C: 34ns/184ns Switching Energy: 220µJ (on), 340µJ (off) Test Condition: 400V, 15A, 22Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 62 A Power - Max: 208 W |
auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
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IRGSL15B60KDPBF | Infineon Technologies |
IGBT Transistors IGBT DISCRETES |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRGSL15B60KDPBF |
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Hersteller: International Rectifier
Description: IGBT NPT 600V 31A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO262-3
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
Description: IGBT NPT 600V 31A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO262-3
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 197+ | 3.06 EUR |
| IRGSL15B60KDPBF |
|
Hersteller: Infineon Technologies
IGBT Transistors IGBT DISCRETES
IGBT Transistors IGBT DISCRETES
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)