IRGSL4062DPBF Infineon Technologies
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 94+ | 1.55 EUR |
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Technische Details IRGSL4062DPBF Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 89 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A, Supplier Device Package: TO-262, IGBT Type: Trench, Td (on/off) @ 25°C: 41ns/104ns, Switching Energy: 115µJ (on), 600µJ (off), Test Condition: 400V, 24A, 10Ohm, 15V, Gate Charge: 50 nC, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 250 W.
Weitere Produktangebote IRGSL4062DPBF nach Preis ab 1.55 EUR bis 3.65 EUR
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IRGSL4062DPBF | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 48A 25W 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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IRGSL4062DPBF | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 600V 48A TO-262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: TO-262 IGBT Type: Trench Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W |
auf Bestellung 1283 Stücke: Lieferzeit 10-14 Tag (e) |
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IRGSL4062DPBF | Hersteller : International Rectifier |
Description: IGBT TRENCH 600V 48A TO-262 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: TO-262 IGBT Type: Trench Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W |
auf Bestellung 46063 Stücke: Lieferzeit 10-14 Tag (e) |
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IRGSL4062DPBF | Hersteller : Infineon Technologies |
IGBT Transistors 600V Low VCEon |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IRGSL4062DPBF | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 48A 25000mW 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IRGSL4062DPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 48A; 250W; TO262 Mounting: THT Kind of package: tube Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO262 Collector current: 48A Power dissipation: 250W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |