IRL1004PBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
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Technische Details IRL1004PBF INFINEON TECHNOLOGIES
Description: MOSFET N-CH 40V 130A TO220AB, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel.
Weitere Produktangebote IRL1004PBF nach Preis ab 2.32 EUR bis 6.56 EUR
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IRL1004PBF | Infineon Technologies |
MOSFETs MOSFT 130A 66.7nC 6.5mOhm LogLvAB |
auf Bestellung 804 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL1004PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 130A TO220AB Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRL1004PBF |
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Hersteller: Infineon Technologies
MOSFETs MOSFT 130A 66.7nC 6.5mOhm LogLvAB
MOSFETs MOSFT 130A 66.7nC 6.5mOhm LogLvAB
auf Bestellung 804 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.98 EUR |
| 25+ | 3.06 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.5 EUR |
| IRL1004PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 130A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 40V 130A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.56 EUR |
| 50+ | 3.35 EUR |
| 100+ | 3.04 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.32 EUR |