IRL1104
Produktcode: 99524
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Lieblingsprodukt
Hersteller: IR
Gehäuse: TO-220
Uds,V: 40
Idd,A: 104
Rds(on), Ohm: 01.08.2000
Ciss, pF/Qg, nC: 3445/68
Bem.: Керування логічним рівнем
JHGF: THT
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Weitere Produktangebote IRL1104
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRL1104 | Infineon Technologies |
Description: MOSFET N-CH 40V 104A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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| IRL1104 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 104A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 40V 104A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


