Technische Details IRL2505S IR
Description: MOSFET N-CH 55V 104A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V.
Weitere Produktangebote IRL2505S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRL2505S | Hersteller : IR |
 09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRL2505S | Hersteller : IR |
TO-263 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRL2505S | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 104A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
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